Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour : SEMICONDUCTING OXIDES
Identifieur interne : 003046 ( Main/Repository ); précédent : 003045; suivant : 003047Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour : SEMICONDUCTING OXIDES
Auteurs : RBID : Pascal:11-0408470Descripteurs français
- Pascal (Inist)
- Effet redresseur, Courant fuite, Caractéristique courant tension, Spectre photoélectron, Oxydation, Dopage, Contact ohmique, Conduction limitée charge espace, Electrode ITO, Bande interdite, Etain Indium Oxyde Mixte, Baryum Strontium Titanate Mixte, Matériau électrode, Couche mince ferroélectrique, Platine, Métal transition.
- Wicri :
English descriptors
- KwdEn :
- Barium Strontium Titanates Mixed, Doping, Electrode material, Energy gap, Ferroelectric thin films, IV characteristic, Indium tin oxide electrode, Leakage currents, Ohmic contacts, Oxidation, Photoelectron spectra, Platinum, Rectification, Space-charge-limited conduction, Tin Indium Oxides Mixed, Transition elements.
Abstract
The electrical properties of (Ba, Sr)TiO3 (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In2O3:Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical properties of (Ba, Sr)TiO<sub>3</sub> thin films with Pt and ITO electrodes: dielectric and rectifying behaviour : SEMICONDUCTING OXIDES</title><author><name>SHUNYI LI</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Ghinea, Cosmina" uniqKey="Ghinea C">Cosmina Ghinea</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Bayer, Thorsten J M" uniqKey="Bayer T">Thorsten J. M. Bayer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Motzko, Markus" uniqKey="Motzko M">Markus Motzko</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Schafranek, Robert" uniqKey="Schafranek R">Robert Schafranek</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Klein, Andreas" uniqKey="Klein A">Andreas Klein</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0408470</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0408470 INIST</idno><idno type="RBID">Pascal:11-0408470</idno><idno type="wicri:Area/Main/Corpus">002976</idno><idno type="wicri:Area/Main/Repository">003046</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title><title level="j" type="main">Journal of physics. Condensed matter : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barium Strontium Titanates Mixed</term><term>Doping</term><term>Electrode material</term><term>Energy gap</term><term>Ferroelectric thin films</term><term>IV characteristic</term><term>Indium tin oxide electrode</term><term>Leakage currents</term><term>Ohmic contacts</term><term>Oxidation</term><term>Photoelectron spectra</term><term>Platinum</term><term>Rectification</term><term>Space-charge-limited conduction</term><term>Tin Indium Oxides Mixed</term><term>Transition elements</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet redresseur</term><term>Courant fuite</term><term>Caractéristique courant tension</term><term>Spectre photoélectron</term><term>Oxydation</term><term>Dopage</term><term>Contact ohmique</term><term>Conduction limitée charge espace</term><term>Electrode ITO</term><term>Bande interdite</term><term>Etain Indium Oxyde Mixte</term><term>Baryum Strontium Titanate Mixte</term><term>Matériau électrode</term><term>Couche mince ferroélectrique</term><term>Platine</term><term>Métal transition</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Platine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The electrical properties of (Ba, Sr)TiO<sub>3</sub> (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In<sub>2</sub>O<sub>3</sub>:Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0></fA03><fA05><s2>23</s2></fA05><fA06><s2>33</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical properties of (Ba, Sr)TiO<sub>3</sub> thin films with Pt and ITO electrodes: dielectric and rectifying behaviour : SEMICONDUCTING OXIDES</s1></fA08><fA11 i1="01" i2="1"><s1>SHUNYI LI</s1></fA11><fA11 i1="02" i2="1"><s1>GHINEA (Cosmina)</s1></fA11><fA11 i1="03" i2="1"><s1>BAYER (Thorsten J. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>MOTZKO (Markus)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHAFRANEK (Robert)</s1></fA11><fA11 i1="06" i2="1"><s1>KLEIN (Andreas)</s1></fA11><fA14 i1="01"><s1>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s2>334202.1-334202.9</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000191172750030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>59 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0408470</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The electrical properties of (Ba, Sr)TiO<sub>3</sub> (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In<sub>2</sub>O<sub>3</sub>:Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70G55</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet redresseur</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Rectification</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Courant fuite</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Leakage currents</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>IV characteristic</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre photoélectron</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoelectron spectra</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Oxydation</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Oxidation</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Dopage</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Doping</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Contact ohmique</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ohmic contacts</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conduction limitée charge espace</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Space-charge-limited conduction</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Electrode ITO</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Indium tin oxide electrode</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Electrodo ITO</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Bande interdite</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Energy gap</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Etain Indium Oxyde Mixte</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Tin Indium Oxides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>13</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Baryum Strontium Titanate Mixte</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Barium Strontium Titanates Mixed</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Matériau électrode</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Electrode material</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Material electrodo</s0><s5>17</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince ferroélectrique</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ferroelectric thin films</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Platine</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Platinum</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Métal transition</s0><s5>48</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Transition elements</s0><s5>48</s5></fC03><fN21><s1>283</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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